NTE322 データシートの表示（PDF） - NTE Electronics

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NTE322

Silicon NPN Transistor RF Power Output

NTE Electronics 

NTE322

Silicon NPN Transistor

RF Power Output

Description:

The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citi-

zen–Band and other high–frequency communications equipment operating to 30MHz. Higher break-

down voltages allow a high percentage of up–modulation in AM circuits.

Features:

D Output Power: 3.5W (Min) @ VCC = 13.6V

D Power Gain: 11.5dB (Min)

D High Collector Emitter Breakdown Voltage: V(BR)CES ≥ 65V

D DC Current Gain: Linear to 500mA

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V

Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA

Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W

Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W

Note 1. RthJA is measured with the device soldered into a typical printed circuit board.

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