NTE335 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE335

Silicon NPN Transistor RF Power Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol Test Conditions Min

Typ

Max Unit

ON Characteristics

DC Current Gain

Dynamic Characteristics

hFE IC = 5A, VCE = 5V

10

−

150

Output Capacitance

Cob VCB = 15V, IE = 0,

−

f = 1MHz

−

250 pF

Functional Tests

Common−Emitter Amplifier Power Gain Gpe VCC = 12.5V,

Collector Efficiency

η

POUT = 80W,

f = 30MHz

Series Equivalent Input Impedance

Zin

Series Equivalent Output Impedance Zout

Parallel Equivalent Input Impedance

−

12

−

− dB

50

−

−%

− .938 − j.341 − Ω

− 1.16 − j.201 − Ω

−

1.06Ω

−

1817pF

Parallel Equivalent Output Impedance −

−

1.19Ω

−

777pF

NTE335

NTE336

.250

(6.35)

.225 (5.72)

.725 (18.42)

E

C

.127 (3.17) Dia

(2 Holes)

B

E

1.061 (25.95)

.480 (12.1) Dia

Ceramic Cap

.260

(6.6)

.065

(1.68)

.975 (24.77)

.095 (2.42)

1.040 (26.4) Max

.520 (13.2)

C

.230

(5.84)

E

E

.100 (2.54)

B

.385

(9.8)

Dia

.005 (0.15)

8−32−NC−3A

Wrench Flat

.168 (4.27) .750

(19.05)

Share Link: