NTE5444 データシートの表示（PDF） - NTE Electronics

部品番号

コンポーネント説明

メーカー

NTE5444

Silicon Controlled Rectifier (SCR) 8 Amp

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Forward or Reverse

Blocking Current

Gate Trigger Current

(Continuous DC)

Gate Trigger Voltage

(Continuous DC)

Peak On–State Voltage

Holding Current

Gate Controlled Turn–On Time

Circuit Commutated Turn–Off

Time

Critical Rate–of–Rise of

Off–State Voltage

IDRM, Rated VDRM or VRRM,

IRRM Gate Open

TJ = +25°C

TJ= +100°C

–

– 10 µA

– – 2 mA

IGT VD = 7V, RL = 100Ω

TC = +25°C

– 7 30 mA

TC = –40°C

– – 60 mA

VGT VD = 7V, RL = 100Ω

TC = +25°C

– 0.75 1.5 V

TC = –40°C

– – 2.5 V

VD = Rated VDRM, RL = 100Ω, TJ = +100°C 0.2 –

–

V

VTM Pulse Width = 1ms to 2 ms, ITM = 5Apeak

– 1.0 1.5 V

Duty Cycle ≤ 2%

ITM = 15.7Apeak –

– 2.0 V

IHold VD = 7V, Gate Open

TC = +25°C

– 6 40 mA

TC = –40°C

– – 70 mA

tgt ITM = 5A, IGT = 20mA, VD = Rated VDRM

–

1

– µs

tq ITM = 5A, IR = 5A

– 15 – µs

TJ= +100°C

– 20 – µs

dv/dt VD = Rated VDRM, Exponential Waveform,

TJ = +100°C, Gate Open

– 50 – V/µs

.530 (13.4) Max

.143 (3.65) Dia Thru

.668

(17.0)

Max

K

G

.655

(16.6)

Max

.166 (4.23)

A (Heat Sink Area)

Heat Sink Contact

Area (Bottom)

.150 (3.82) Max

Share Link: