NTE7092 データシートの表示（PDF） - NTE Electronics
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NTE7092 Datasheet PDF : 3 Pages
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Power Transistor Characteristics (Cont’d)
DC Current Gain
NTE7092
NTE7093
hFE VCE = 4V, IC = 1A
10 – 30
13 – 40
NTE7094, NTE7095
15 – 40
Collector Cutoff Current
NTE7092
NTE7093, NTE7094
NTE7095
Base–Emitter Voltage
Base–Emitter Saturation Voltage
NTE7092, NTE7093, NTE7095
NTE7094
Switching Time
NTE7092
NTE7093
NTE7094
NTE7095
ICEX
VEB(R)
VCE = 950V, VBE = 1.5V
VCE = 550V, VBE = 1.5V
VCE = 900V, VBE = 1.5V
IEB(R) = 100µA, Note 3
VBE(sat)
ts
tr
ts
tr
ts
tr
ts
tr
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCC = 250V, IC = 2A,
IB1 = 0.15A, IB2 = 0.5A
IC = 2A, RL = 50Ω, IB1 = 0.3A,
IB2 = –0.3A
IC = 3A, RL = 33Ω, IB1 = 0.5A,
IB2 = –0.5A
IC = 3A, RL = 83Ω, IB1 = 0.4A,
IB2 = –0.4A
– – 1 mA
– – 1 mA
– – 1 mA
––1
V
– – 1.5 V
– – 1.5 V
– – 7 µs
– – 1 µs
– – 12 µs
– – 0.4 µs
– – 12 µs
– – 0.7 µs
– – 12 µs
– – 0.4 µs
Note 3. The reverse Bias Current (Pulse) of Base–Emitter is no more than 400mA.
Pin Connection Diagram
(Front View)
5 Current Detector
4 GND
3 Input (C)
2 Base Drive (B)
1 –VD Sense (–)
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