NTE869 データシートの表示（PDF） - NTE Electronics

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NTE869

Integrated Circuit Dual, High Speed, Programmable Current Mode (Norton) Amp

NTE Electronics 

Electrical Characteristics: (ISET(IN) = ISET(OUT) = 0.5mA, Vsupply = 12V, TA = +25°C unless

otherwise noted.)

Parameter

Test Conditions

Min Typ Max Unit

Open Loop Voltage Gain

Bandwidth Unity Gain

Gain Bandwidth Product Gain

of 10 to 100

Vsupply = 12V, RL = 1k, f = 100Hz

TA = 125°C

RIN = 1kΩ, Ccomp = 10pF

RIN 50Ω to 200Ω

62 72 –

dB

– 68 –

15 30

–

MHZ

200 400 – MHZ

Slew Rate

Unity Gain

Gain of 10 to 100

RIN = 1kΩ, Ccomp = 10pF

RIN < 200Ω

V/µs

– 30 –

– 60 –

Amplifier to Amplifier Coupling f = 100HZ to 100kHZ, RL = 1k

– –80 –

dB

Mirror Gain (Note 1)

@ 2mA IIN(+), ISET = 5µA, TA = 25°C

@ 0.2mA IIN(+), ISET=5µA Over Temp

@ 20µA IIN(+), ISET = 5µA Over Temp

0.9 1.0 1.1 µA/µA

0.9 1.0 1.1

0.9 1.0 1.1

Mirror Gain (Note 1)

@ 20µA to 0.2mA IIN(+) Over Temp, ISET = 5µA –

3

5

%

Input Bias Current

Inverting Input, TA = 25°C Over Temp

–

8

15

µA

Input Resistance (βre)

Inverting Input

– 2.5 –

kΩ

Output Resistance

Output Voltage Swing

VOUT High

VOUT Low

Output Currents

Source

Sink (Linear Region)

Sink (Overdriven)

Supply Current

Power Supply Rejection

IOUT = 15mA rms, f = 1MHz

RL = 600Ω

IIN(–) & IIN(+) Grounded

IIN(–) = 100µA, IIN(+) = 0

IIN(–) & IIN(+) Grounded, RL = 100Ω

Vcomp =0.5V = VOUT = 1V, IIN(+) = 0

IIN(–) = 100µA, IIN(+) = 0, VOUT Force = 1V

Non–Inverting Input Grounded, RL=∞

f = 120HZ, IIN(+) Grounded

– 3.5 –

Ω

9.5 10.3 –

V

– 2.0 50 mV

16 40

–

mA

– 4.7 –

1.5 3.0 –

– 18.5 22 mA

40 50 –

dB

Note 1. Mirror gain is the current gain of the current mirror which is used as the non–inverting input.

IIN (–)

AI = IIN (+)

∆Mirror

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