CHA2063A データシートの表示（PDF） - United Monolithic Semiconductors

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CHA2063A

7-13GHz Low Noise Amplifier

United Monolithic Semiconductors 

CHA2063a

7-13GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2063a is a two-stage wide band

monolithic low noise amplifier.

The circuit is manufactured with a

PM-HEMT process : 0.25µm gate length,

via holes through the substrate, air bridges

and electron beam gate lithography.

It is supplied in chip form or in an hermetic

leadless ceramic package.

Main Features

■ Broad band performance 7-13GHz

■ 2.0dB noise figure, 8-13GHz

■ 19dB gain

■ Low DC power consumption, 40mA

■ 18dBm 3rd order intercept point

■ Chip size : 1,52 x 1,27 x 0.1mm

Pin Out

1 - NC

2 - NC

3 - RF output

4 - NC

5 - Vdd

6 - RF input

Main Characteristics

Tamb = +25°C, package form

Symbol

NF

G

Parameter

Noise figure, 7-8GHz

Noise figure, 8-13GHz

Gain

∆G

Gain flatness

Min Typ Max Unit

2.5

2.0

3.0

2.5

dB

16

19

dB

± 2.0

dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

Ref. : DSCHA20630096 -05-Apr-00

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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