CHA2063A データシートの表示（PDF） - United Monolithic Semiconductors

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CHA2063A

7-13GHz Low Noise Amplifier

United Monolithic Semiconductors 

7-13GHz Low Noise Amplifier

CHA2063a

Electrical Characteristics

Chip form

Tamb = +25°C, Vd = +4V

Symbol

Parameter

Fop Operating frequency range

G

Gain

∆G

Gain flatness

NF Noise figure 7-8 Ghz

Noise figure 8-12 GHz

VSWRin Input VSWR

VSWRout Ouput VSWR

P1dB

Output power at 1dB gain

compression F=10 GHz

IP3 3rd order intercept point

Id

Drain bias current

Test

Condi

Min

tions

(1)

7

17

(1)

(1)

Typ Max

12

19

±2

2.5 3.0

2.0 2.5

2.0:1 3.0:1

2.0:1 3.0:1

8

18

40

80

Unit

Ghz

dB

dB

dB

dBm

dBm

mA

(1) These values are representative of on-wafer measurements that are made without

bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and

output bonding wires, the indicated parameter values are close to those of the CHA2063a

packaged product.

Ref. : DSCHA20630096 -05-Apr-00

3/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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