NVTFS5811NL(2011) データシートの表示（PDF） - ON Semiconductor
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NVTFS5811NL Datasheet PDF : 6 Pages
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NVTFS5811NL
TYPICAL CHARACTERISTICS
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGS = 0 V
Ciss
TJ = 25°C
Coss
Crss
10
20
30
40
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
VDD = 32 V
ID = 20 A
VGS = 4.5 V
100
tr
tf
td(off)
10
td(on)
1.0
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
10
QT
8
6
4 Qgs
Qgd
2
VDS = 32 V
ID = 20 A
TJ = 25°C
0
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
60
VGS = 0 V
50 TJ = 25°C
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = 10 V
Single Pulse
TC = 25°C
10 ms
10
100 ms
1 ms
1 RDS(on) Limit
Thermal Limit
Package Limit
10 ms
dc
0.1
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
60
ID = 36 A
50
40
30
20
10
0
25
50
75
100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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