NX8563LB541 データシートの表示（PDF） - NEC => Renesas Technology

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NX8563LB541

CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

NEC => Renesas Technology 

NX8563LB Series

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Forward Current of LD

IF

300

mA

Reverse Voltage of LD

VR

2.0

V

Forward Current of PD

IF

10

mA

Reverse Voltage of PD

VR

20

V

Operating Case Temperature

TC

−20 to +65

°C

Storage Temperature

Tstg

−40 to +85

°C

Lead Soldering Temperature (10 s)

Tsld

260

°C

ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 °C, TC = −20 to +65 °C)

Parameter

Laser Set Temperature

Forward Voltage

Threshold Current

Optical Output Power from Fiber

Threshold Output Power from Fiber

Quantum Efficiency

Peak Emission Wavelength

Spectral Line Width

Side Mode Suppression Ratio

FM Response

Relative Intensity Noise

Flat frequency response

Polarization Extinction Ratio *2

Symbol

Conditions

Tset

VF

Pf = 10 mW

Ith

Pf

IF = 167 mA, TLD = Tset

Pth

IF = Ith

η

λp

Pf = 10 mW, CW, TLD = Tset

∆ν Pf = 10 mW, CW, 3 dB down

SMSR

ηFM

Pf = 10 mW, CW

Pf = 10 mW

RIN Pf = 10 mW, 20 MHz to 3 GHz

fm

Pf = 10 mW, +/−3 dB

ext Pf = 10 mW, CW

MIN. TYP. MAX.

20

35

0.9

1.5

20

40

10

100

0.08

0.1

Specified to ITU-T *1

1

2

30

35

50

70

−150

1.8

15

20

Unit

°C

V

mA

mW

µW

W/A

nm

MHz

dB

MHz/mA

dB/Hz

GHz

dB

*1 Please refer to ORDERING INFORMATION

*2 Polarization state of LD is aligned parallel to the slow axis.

4

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