OD-850WHT データシートの表示（PDF） - OptoDiode Corp
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OD-850WHT Datasheet PDF : 4 Pages
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From Deep UV to Mid-IR
An ITW Company
High Temperature GaAlAs IR Emitters
FEATURES
• High Optical Output
• 850 nm Peak Emission
• Hermetically Sealed TO-46 Package
• Wide Emission Angle to Cover a Large Area
• Extended Operating Temperature Range
• No Internal Coatings
• No Derating or Heat Sink Required to 80 °C
OD-850WHT
Electro-Optical Characteristics at 25 °C
Parameters
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50 %, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Rise Time
Fall Time
Test Conditions
IF = 100 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 100 mA
IR = 10 µA
IFP = 20 mA
IFP = 20 mA
Min Typ
19
26
850
40
80
1.6
5
30
20
20
Absolute Maximum Ratings at 25°C
Parameters
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10 µs, 200 Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10 sec)
1 Derate per thermal derating curve above 25 °C.
2 Derate linearly above 25 °C
Thermal Parameters
Parameters
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
1 Heat transfer minimized by measuring in still air with minimum heat conducting through leads.
2 Air circulating at a rapid rate to keep case temperature at 25 °C.
Max
Units
mW
nm
nm
Deg
2
Volts
Volts
nsec
nsec
Units
200 mW
100 mA
300 mA
5 Volts
260 °C
Units
-65 °C to 150 °C
150 °C
400 °C/W Typical
135 °C/W Typical
Revision July 13, 2018
Page 1 of 4
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