GLT4160M04E-60J3(2000) データシートの表示（PDF） - G-Link Technology
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GLT4160M04E-60J3 Datasheet PDF : 21 Pages
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G-LINK
GLT4160M04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Jan 2000 (Rev. 1.3)
Absolute Maximum Ratings*
Capacitance*
TA=25°C, VCC=2.5V±0.2V, VSS=0V
Operating Temperature, TA (ambient)
.............................................….0°C to
Symbol
Parameter
+70°C
For Extended Temperature……………..-20°C to 85°C
Storage Temperature(plastic)............-55°C to +150°C
CIN1 Address Input
CIN2 RAS, CAS, WE, OE
Voltage Relative to VSS........................-0.5V to + 4.6V
Short Circuit Output Current...............................20mA
COUT
Data Input/Output
Power Dissipation...............................................1.0W
Max. Unit
5 pF
7 pF
7 pF
*Note: Operation above Absolute Maximum Ratings can *Note: Capacitance is sampled and not 100% tested
aversely affect device reliability.
Electrical Specifications
l All voltages are referenced to GND.
l After power up, wait more than 200µs and then, execute eight CAS -before- RAS or RAS -only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
WE
CAS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
RAS
NO.2 CLOCK
GENERATOR
COLUMN-
ADDRESS
11
BUFFER(11)
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW
11
ADDRESS
11
BUFFERS(11)
NO.1 CLOCK
GENERATOR
4
DATA-IN
BUFFER
DATA-OUT
4
BUFFER
4
11
COLUMN
DECODER
2048
4
SENSE AMPLIFIERS
I/O GATING
2048
2048
2048 x 1024 x 4
MEMORY
ARRAY
DQ0
DQ1
DQ2
DQ3
OE
VDD
VSS
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Santa Clara, CA 95051, U.S.A.
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G-Link Technology Corporation,Taiwan
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