P0111DA1AA3 データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
P0111DA1AA3 Datasheet PDF : 9 Pages
| |||
P011xx
Characteristics
Table 4. Thermal resistance
Symbol
Rth(j-a) Junction to case (DC)
Rth(j-t) Junction to tab (DC)
Rth(j-a) Junction to ambient (DC)
1. S = Copper surface under tab.
Parameter
Maximum
TO-92
80
SOT-223
30
TO-92
150
S(1) = 5 cm2 SOT-223
60
Unit
°C/W
°C/W
°C/W
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
Average and DC on-state current
versus lead temperature
P(W)
1.0
0.9
α = 180°
IT(AV)(A)
1.1
1.0
D.C. (SOT-223)
0.8
0.9
0.7
0.8
D.C. (TO-92)
0.6
0.7
0.6
0.5
α = 180° (SOT-223)
0.5
0.4
0.4
0.3
360°
0.3
α = 180° (TO-92)
0.2
0.2
0.1
IT(AV)(A)
α
0.1
0.0
0.0
Tlead(°C)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
25
50
75
100
125
Figure 3. Average and DC on-state current
versus ambient temperature
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
IT(AV)(A)
1.2
1.1
D.C. (SOT-223)
1.0
Device mounted on FR4 with
recommended pad layout
0.9
0.8
0.7
D.C. (TO-92)
0.6
0.5
α = 180° (SOT-223)
0.4
0.3
α = 180° (TO-92)
0.2
0.1
Tamb(°C)
0.0
0
25
50
75
100
125
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
SOT-223
TO-92
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
3/9
Share Link: 