P4C174 データシートの表示（PDF） - Semiconductor Corporation
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P4C174 Datasheet PDF : 12 Pages
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P4C174
DATA RETENTION CHARACTERISTICS (P4C174 Military Temperature Only)
Symbol
Parameter
VDR
VCC for Data Retention
Test Conditons
Typ.*
Max
Min
VCC =
VCC =
2.0V 3.0V 2.0V 3.0V
2.0
ICCDR Data Retention Current
tCDR
Chip Deselect to
Data Retention Time
tR†
Operation Recovery Time
*TA = +25¹C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
CE ≥ VCC –0.2V,
VIN ≥ VCC –0.2V
or VIN ≤ 0.2V
10
0
tRC§
15 600 900
Unit
V
µA
ns
ns
DATA RETENTION WAVEFORM
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
ICC
Parameter
Dynamic Operating Current*
Temperature
Range
Commercial
Military
–8 –10 –12 –15 –20 –25 Unit
200 180 170
155 150 mA
170 160 155 mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
Document # SRAM118 REV C
Page 3 of 12
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