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P4C174 データシートの表示(PDF) - Semiconductor Corporation

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P4C174
PYRAMID
Semiconductor Corporation PYRAMID
P4C174 Datasheet PDF : 12 Pages
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P4C174
AC CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, 0°C to +70°C)
Symbol
Parameter
–8
–10
–12
–15
–20
–25
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
tWC
Write Cycle Time
8
10
12
15
20
20
ns
tCW
Chip Enable LOW to End of 7
9
10
12
15
15
ns
Write
tAS
Address Valid to Beginning
0
0
0
0
0
0
ns
of Write
tAW
Address Valid to End of
7
9
10
12
15
15
ns
Write
tAH
End of Write to Address
0
0
0
0
0
0
ns
Change
tWP
Write Pulse Width
7
9
10
12
15
15
ns
tDW
Data Valid to End of Write
6
6
6
7
10
10
ns
tDH
End of Write to Data Change 0
0
0
0
0
0
ns
tOW
Write Enable HIGH to Output 0
0
0
0
0
0
ns
LOW-Z (1)
tWZ
Write Enable LOW to Output
4
HIGH-Z (1)
4
4
5
7
7 ns
WRITE CYCLE NO. 1 (WE CONTROLLED)(6)
WRITE CYCLE NO. 2 (CE CONTROLLED)(6)
Document # SRAM118 REV C
Page 6 of 12

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