BGD702N データシートの表示（PDF） - Philips Electronics
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BGD702N Datasheet PDF : 8 Pages
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Philips Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5
+VB
7
common
8
common
9
output
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC).
handbook, halfpage
123 5 789
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Gp
power gain
Itot
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 750 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Vi
RF input voltage
Tstg
storage temperature
Tmb
operating mounting base temperature
MIN.
18
18.5
−
MAX.
19
−
435
UNIT
dB
dB
mA
MIN.
−
−40
−20
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
2001 Nov 02
2
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