75344G(2001) データシートの表示（PDF） - Fairchild Semiconductor
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75344G Datasheet PDF : 10 Pages
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HUF75344G3, HUF75344P3, HUF75344S3S
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 75A
ISD = 75A, dISD/dt = 100A/µs
ISD = 75A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
105
ns
-
-
210
nC
Typical Performance Curves
1.2
80
1.0
60
0.8
0.6
40
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B1
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