DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

P4SMA11C データシートの表示(PDF) - Fuji Electric

部品番号
コンポーネント説明
メーカー
P4SMA11C Datasheet PDF : 4 Pages
1 2 3 4
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
Device
Breakdown Voltage Test Stand-Off Maximum
Maximum Maximum Maximum
Device
VBR
Current Voltage Reverse Leakage Peak Pulse Clamping Temperature
Marking (Volts) (Note 1) @IT VWM
Code Min
Max (mA) (Volts)
at VWM
ID (uA)
Current IPPM Voltage at IPPM Coefficient
(Note 2)(Amps) VC(Volts) of VBR(% / OC)
P4SMA100 CWJ
90.0
110.0
1.0
81.0
5.0
2.9
144.0
0.106
P4SMA100A CXJ
95.0
105.0
1.0
85.5
5.0
3.0
137.0
0.106
P4SMA110
CYJ
99.0
121.0
1.0
89.2
5.0
2.6
158.0
0.107
P4SMA110A CZJ
105.0
116.0
1.0
94.0
5.0
2.7
152.0
0.107
P4SMA120 RDJ
108.0
132.0
1.0
97.2
5.0
2.4
173.0
0.107
P4SMA120A REJ
114.0
126.0
1.0
102.0
5.0
2.5
165.0
0.107
P4SMA130
RFJ
117.0
143.0
1.0
105.0
5.0
2.2
187.0
0.107
P4SMA130A RGJ
124.0
137.0
1.0
111.0
5.0
2.3
179.0
0.107
P4SMA150 RHJ
135.0
165.0
1.0
121.0
5.0
1.9
215.0
0.108
P4SMA150A RKJ
143.0
158.0
1.0
128.0
5.0
2.0
207.0
0.108
P4SMA160
RLJ
144.0
176.0
1.0
130.0
5.0
1.8
230.0
0.108
P4SMA160A RMJ
152.0
168.0
1.0
136.0
5.0
1.9
219.0
0.108
P4SMA170 RNJ
153.0
187.0
1.0
138.0
5.0
1.7
244.0
0.108
P4SMA170A RPJ
162.0
179.0
1.0
145.0
5.0
1.8
234.0
0.108
P4SMA180 RQJ
162.0
198.0
1.0
146.0
5.0
1.6
258.0
0.108
P4SMA180A RRJ
171.0
189.0
1.0
154.0
5.0
1.7
246.0
0.108
P4SMA200
RSJ
180.0
220.0
1.0
162.0
5.0
1.4
287.0
0.108
P4SMA200A RTJ
190.0
210.0
1.0
171.0
5.0
1.51
274.0
0.108
Notes:
1. VBR measured after IT applied for 300us, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure 3 and derate per Figure 2.
3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled.
4. For bidirectional use C or CA suffix for types P4SMA6.8 through P4SMA200A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
- 525 -

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]