GS74116AGP-12(2013) データシートの表示（PDF） - Giga Semiconductor

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GS74116AGP-12
(Rev.:2013)

256K x 16 4Mb Asynchronous SRAM

Giga Semiconductor 

Address

OE

CE

UB, LB

WE

Data In

Data Out

Address

OE

CE

UB, LB

WE

Data In

Data Out

Write Cycle 1: WE control

tWC

tAW

tWR

tCW

tBW

tAS

tWP

tWHZ

tDW tDH

Data valid

tWLZ

High impedance

Write Cycle 2: CE control

tWC

tAW

tAS

tCW

tWR1

tBW

tWP

tDW tDH

Data valid

High impedance

GS74116AGP/X

Rev: 1.10 1/2013

8/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2001, GSI Technology

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