T431616A-7C データシートの表示（PDF） - Taiwan Memory Technology
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T431616A-7C Datasheet PDF : 31 Pages
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tm TE
CH
T431616A
Page Read Cycle at Different Bank @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
CS
*N ote1
H IG H
RAS
CAS
*N ote2
ADDR
RAa
CAa RBb
CBb
CAc
CBd
CAe
BA
A 10/A P
RAa
RBb
CL=2
DQ
CL=3
Q A a0 Q A a1 Q A a2 Q A a3 Q B b0 Q B b1 Q B b2 Q B b3 Q A c0 Q A c1 Q B d0 Q B d1 Q A e0 Q A e1
Q A a0 Q A a1 Q A a2 Q A a3 Q B b0 Q B b1 Q B b2 Q B b3 Q A c0 Q A c1 Q B d0 Q B d1 Q A e0 Q A e1
WE
DQM
R o w A ctiv e
(A -B ank)
R ead (A -
B ank)
R o w A ctiv e
(B -B ank)
R ead (B -
B ank)
R ead (A -
B ank)
R ead (B -
B ank)
R ead (A -
B ank)
P recharge
(A -B ank)
:D o n 't c a re
*Note : 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst resd by row precharge, both the read and the precharge banks must be the same.
Taiwan Memory Technology, Inc. reserves the right P.19
to change products or specifications without notice.
Publication Date: DEC. 2000
Revision: C
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