M29DCL1-8T データシートの表示（PDF） - STMicroelectronics

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M29DCL1-8T

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

STMicroelectronics 

M29W800AT

M29W800AB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

Low Voltage Single Supply Flash Memory

FEATURES SUMMARY

■ 2.7V to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ

OPERATIONS

■ ACCESS TIME: 80ns

■ PROGRAMMING TIME: 10µs typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy

Output

■ SECURITY PROTECTION MEMORY AREA

■ INSTRUCTION ADDRESS CODING: 3 digits

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTI BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M29W800AT: D7h

– Bottom Device Code, M29W800AB: 5Bh

Figure 1. Packages

FBGA

TSOP48 (N)

12 x 20mm

TFBGA48 (ZA)

8 x 6 solder balls

SO44 (M)

Figure 2. Logic Diagram

VCC

19

A0-A18

15

DQ0-DQ14

W

DQ15A–1

M29W800AT

E

M29W800AB

BYTE

G

RB

RP

March 2004

VSS

AI02599

1/40

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