EN29F800B-45T データシートの表示（PDF） - Eon Silicon Solution Inc.

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EN29F800B-45T

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only

Eon Silicon Solution Inc. 

EN29F800

EN29F800

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 5.0 Volt-only

FEATURES

• 5.0V ± 10%, single power supply operation

- Minimizes system level power requirements

• Manufactured on 0.32 µm process technology

• High performance

- Access times as fast as 45 ns

• Low power consumption

- 25 mA typical active read current

- 30 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Flexible Sector Architecture:

- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

- One 8 Kword, two 4 Kword, one 16 Kword

and fifteen 32 Kword sectors (word mode)

- Supports full chip erase

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

• High performance program/erase speed

- Byte program time: 10µs typical

- Sector erase time: 500ms typical

- Chip erase time: 3.5s typical

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

• Low Power Active Current

- 30mA active read current

- 30mA program/erase current

• JEDEC Standard program and erase

commands

• JEDEC standard DATA polling and toggle

bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• 0.32 µm double-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 3.2V

• >100K program/erase endurance cycle

• 48-pin TSOP (Type 1)

• Commercial Temperature Range

GENERAL DESCRIPTION

The EN29F800 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized

as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The

EN29F800 features 5.0V voltage read and write operation, with access times as fast as 45ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29F800 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single (or

multiple) Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

4800 Great America Parkway, Suite 202

1

Santa Clara, CA 95054

Rev. E, Issue Date: 2001/07/05

Tel: 408-235-8680

Fax: 408-235-8685

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