1719-8 データシートの表示（PDF） - GHz Technology
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1719-8 Datasheet PDF : 2 Pages
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1719-8
8 Watts, 28 Volts, Class C
Microwave 1700 - 1900 MHz
GENERAL DESCRIPTION
The 1719-8 is a COMMON BASE transistor capable of providing 8 Watts,
Class C output power over the band 1750-1850 MHz. The transistor includes
input prematching for full Broadband capabiliy. Gold metalizaton and
diffused ballasting are used to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
30 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
2.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55LV, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 1750 -1850 MHz
8.0
Watts
Vcc = 28 Volts
1.75 Watts
7.0
dB
40
%
Pout = 8.0 Watts
10:1
BVces
BVebo
Hfe
Cob
θjc
Collector to Emitter Breakdown Ic = 10 mA
50
Volts
Emitter to Base Breakdown
Ie = 5 mA
3.5
Volts
Current Gain
Vce = 5V, Ic = 500 mA 20
120
Output Capacitance
Vcb = 28V, F = 1 MHz
15
pF
Thermal Resistance
Tc = 25oC
5.8 oC/W
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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