CXD2302Q データシートの表示（PDF） - Sony Semiconductor
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CXD2302Q Datasheet PDF : 25 Pages
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CXD2302Q
Electrical Characteristics
Analog characteristics
(Fc = 50MHz, AVDD = 5V, DVDD = 3 to 5.5V, VRB = 0.5V, VRT = 2.5V, Ta = 25°C)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Max. conversion rate
Min. conversion rate
Fc max.
Fc min.
AVDD = 4.75 to 5.25V
Ta = –40 to +85°C,
VIN = 0.5 to 2.5V
fIN = 1kHz triangular wave
50
65
MSPS
0.5
Analog input band width BW
Envelope
RIN = 33Ω
–1dB
–3dB
60
MHz
100
Differential non-linearity error ED
Integral non-linearity error EL
Offset voltage∗1
EOT
EOB
End point
Potential difference to VRT
Potential difference to VRB
±0.3 ±0.5
LSB
+0.7 ±1.5
–70 –50 –30
mV
20
40
60
Differential gain error
DG
Differential phase error
DP
Sampling delay
tsd
NTSC 40 IRE mod ramp
Fc =14.3MSPS
3
%
1.5
deg
0
ns
Clamp offset voltage∗2
EOC
VIN = DC
CIN = 10µF
VREF = 0.5V
0
tpcw = 2.75µs
Fc = 14.3MHz VREF = 2.5V
0
Fclp = 15.75kHz
20
40
mV
20
40
FIN = 100kHz
45
FIN = 500kHz
44
Signal-to-noise ratio
SNR
FIN = 1MHz
FIN = 3MHz
44
dB
43
FIN = 10MHz
38
FIN = 25MHz
32
FIN = 100kHz
51
FIN = 500kHz
46
Spurious free dynamic
range
FSDR
FIN = 1MHz
FIN = 3MHz
49
dB
46
FIN = 10MHz
45
FIN = 25MHz
45
∗1 The offset voltage EOB is a potential difference between VRB and a point of position where the voltage
drops equivalent to 1/2 LSB of the voltage when the output data changes from “00000000” to “00000001”.
EOT is a potential difference between VRT and a potential of point where the voltage rises equivalent to
1/2LSB of the voltage when the output data changes from “11111111” to “11111110”.
∗2 Clamp offset voltage varies individually. When using with R, G, B 3 channels, color sliding may be
generated.
–6–
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