PBYR2150CT データシートの表示（PDF） - Philips Electronics
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PBYR2150CT Datasheet PDF : 5 Pages
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Philips Semiconductors
Schottky barrier double diode
GRAPHICAL DATA
10
handboIoFk, halfpage
(A)
1
MGD766
10−1
10−2
(4)
(3)
(2)
10−3
(1)
10−4
10−5
10−6
0
0.2
0.4
0.6
0.8
VF (V)
(1) Tamb = 25 °C.
(2) Tamb = 60 °C.
(3) Tamb = 80 °C.
(4) Tamb = 100 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Preliminary specification
PBYR2150CT
10−2
handbook, halfpage
IR
(A)
10−3
10−4
MGD767
(4)
(3)
(2)
10−5
(1)
10−6
0
50
(1) Tamb = 25 °C.
(2) Tamb = 60 °C.
(3) Tamb = 80 °C.
(4) Tamb = 100 °C.
100
150
VR (V)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
250
handbook, halfpage
Cd
(pF)
200
150
100
50
0
0
MGD768
50
VR (V)
100
f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 Oct 14
4
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