Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR345CTD series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
pcb mounted, minimum footprint, FR4
board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
IF = 1.5 A; Tj = 125˚C
IF = 3 A; Tj = 125˚C
IF = 3 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
TYP.
-
-
50
MAX. UNIT
5 K/W
4 K/W
- K/W
MIN.
-
-
-
-
-
-
TYP.
0.51
0.62
0.71
0.05
3.2
65
MAX. UNIT
0.57 V
0.7 V
0.84 V
0.2 mA
8 mA
- pF
September 1998
2
Rev 1.100