NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Product data sheet
PDTA115E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
100
100
MAX. UNIT
−50 V
−20 mA
−
kΩ
−
kΩ
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115EM
PDTA115ES
PDTA115ET
PDTA115EU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
5E
6B
62
F6
TA115E
*AB(1)
*7C(1)
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
PDTC115ES
PDTC115ET
PDTC115EU
2004 Jul 30
2