PESD5V0S2BT データシートの表示（PDF） - NXP Semiconductors.
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PESD5V0S2BT Datasheet PDF : 12 Pages
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NXP Semiconductors
PESD5V0S2BT
Low capacitance bidirectional double ESD protection diode
6. Characteristics
Table 8. Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per diode
VRWM
IRM
VCL
VBR
rdif
Cd
reverse standoff voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
-
-
VRWM = 5 V
-
5
IPP = 1 A
[1][2] -
-
IPP = 12 A
[1][2] -
-
IR = 1 mA
5.5 -
IR = 1 mA
-
-
f = 1 MHz; VR = 0 V
-
35
5
V
100 nA
10 V
14 V
9.5 V
50 Ω
45 pF
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform.
[2] Measured from pin 1 to 3 or pin 2 to 3.
103
PPP
(W)
102
001aaa632
1.2
PPP
PPP(25°C)
0.8
0.4
001aaa633
10
1
10
102
103
104
tp (µs)
Fig 3.
Tamb = 25 °C
tp = 8/20 µs exponential decay waveform
Peak pulse power dissipation as a function of
pulse duration; typical values
0
0
50
100
150
200
Tj (°C)
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD5V0S2BT_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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