Philips Semiconductors
Complementary enhancement mode
MOS transistors
Product specification
PHC2300
handbo1o2k,0h0alfpage
ID
(mA)
VGS = 10 V
800
5V
4V
3.5 V
MLD841
3V
400
2.5 V
2V
0
0
4
8 VDS (V) 12
Tamb = 25 °C; tp = 80 µs; δ = 0.
Fig.8 Output characteristics; N-channel; typical
values.
handbo−ok8,0h0alfpage
ID
(mA)
−600
−400
MBH441
VGS = −10 V
−4.5 V
−4.0 V
−3.5 V
−200
0
0
−3.0 V
−2.5 V
−2.0 V
−2
−4
−6
−8 −10 −12
VDS (V)
Tamb = 25 °C; tp = 80 µs; δ = 0.
Fig.9 Output characteristics; P-channel; typical
values.
handbo1o2k,0h0alfpage
ID
(mA)
800
400
MLD842
−800
handbook, halfpage
ID
(mA)
−600
−400
−200
MBH440
0
0
2
4
6
8
10
VGS (V)
0
0
−2
−4
−6
−8
−10
VGS (V)
VDS = 10 V; Tamb = 25 °C; tp = 80 µs; δ = 0.
Fig.10 Transfer characteristic; N-channel; typical
values.
VDS = −10 V; Tamb = 25 °C; tp = 80 µs; δ = 0.
Fig.11 Transfer characteristic; P-channel; typical
values.
2002 Jul 09
8