PHC2300 データシートの表示（PDF） - Philips Electronics
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PHC2300 Datasheet PDF : 16 Pages
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Philips Semiconductors
Complementary enhancement mode
MOS transistors
Product specification
PHC2300
handboo2k,0h0alfpage
C
(pF)
150
100
Ciss
MLD843
50
Coss
Crss
0
0
5
10
15
20
25
VDS (V)
f = 1 MHz; Tamb = 25 °C.
Fig.12 Capacitance as a function of drain-source
voltage; N-channel typical values.
160
handbook, halfpage
C
(pF)
120
MDA236
80
Ciss
40
Coss
Crss
0
0
−5
−10
−15
−20
−25
VDS (V)
f = 1 MHz; Tamb = 25 °C.
Fig.13 Capacitance as a function of drain-source
voltage; P-channel typical values.
12
handbook, halfpage
VGS
(V)
8
(1)
4
MLD844
50
VDS
(V)
37.5
12
handbook, halfpage
VGS
(V)
8
25
(2)
(1)
4
12.5
MLD845
50
VDS
(V)
37.5
25
(2)
12.5
0
0
0
1560
3120
4680
6240
QG (pC)
VDD = 50 V; ID = 170 mA; Tamb = 25 °C.
(1) VDS.
(2) VGS.
Fig.14 Gate-source voltage and drain-source
voltage as a function of total gate charge;
N-channel typical values.
0
0
0
535
1070
1605
2140
QG (pC)
VDD = −50 V; ID = −115 mA; Tamb = 25 °C.
(1) VDS.
(2) VGS.
Fig.15 Gate-source voltage and drain-source
voltage as a function of total gate charge;
P-channel typical values.
2002 Jul 09
9
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