PHB13N40E データシートの表示（PDF） - Philips Electronics
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PHB13N40E Datasheet PDF : 10 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP13N40E, PHB13N40E, PHW13N40E
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
Peak Pulsed Drain Current, IDM (A)
100
RDS(on) = VDS/ ID
10
1
d.c.
PHP13N40E
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
10
100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Transient Thermal Impedance, Zth j-a (K/W)PHP13N40E
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
PD tp D = tp/T
0.001
1E-06
1E-05
T
t
1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
pulse width, tp (s)
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Drain Current, ID (A)
8
Tj = 25 C
7
VGS = 10 V
PHP13N40E
5V
6
4.8 V
5
4.6 V
4
3
4.4 V
4.2 V
2
4V
1
0
0
1
2
3
4
5
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
Drain-Source On Resistance, RDS(on) (Ohms)
1.4
4 V 4.2V 4.4V
4.6V
1.2
Tj = 25 C
1
4.8V
0.8
5V
0.6
0.4
0.2
0
0
VGS = 10 V
PHP13N40E
1
2
3
4
5
6
7
8
Drain Current, ID (A)
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
December 1998
4
Rev 1.000
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