PMBT3906YS,125 データシートの表示（PDF） - NXP Semiconductors.

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PMBT3906YS,125

40 V, 200 mA PNP/PNP general-purpose double transistor

NXP Semiconductors. 

NXP Semiconductors

PMBT3906YS

40 V, 200 mA PNP/PNP general-purpose double transistor

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol

Parameter

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

Rth(j-sp)

thermal resistance from

junction to solder point

Per device

Rth(j-a)

thermal resistance from

junction to ambient

Conditions

in free air

in free air

Min Typ Max Unit

[1] -

-

543 K/W

-

-

290 K/W

[1] -

-

357 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

103

Zth(j-a)

(K/W)

102

δ=1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

10

0.01

0

006aab114

1

10−5

10−4

10−3

10−2

10−1

1

10

102

103

tp (s)

Fig 2.

FR4 PCB, standard footprint

Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PMBT3906YS_2

Product data sheet

Rev. 02 — 13 May 2009

© NXP B.V. 2009. All rights reserved.

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