PMBT3906YS,125 データシートの表示（PDF） - NXP Semiconductors.
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PMBT3906YS,125 Datasheet PDF : 12 Pages
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NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off
VCB = −30 V; IE = 0 A
current
IEBO
emitter-base cut-off
VEB = −6 V; IC = 0 A
current
hFE
VCEsat
VBEsat
fT
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
transition frequency
VCE = −1 V
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −50 mA
IC = −100 mA
IC = −10 mA;
IB = −1 mA
IC = −50 mA;
IB = −5 mA
IC = −10 mA;
IB = −1 mA
IC = −50 mA;
IB = −5 mA
VCE = −20 V;
IC = −10 mA;
f = 100 MHz
Cc
collector capacitance
VCB = −5 V;
IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance
VBE = −0.5 V;
IC = ic = 0 A;
f = 1 MHz
NF
noise figure
VCE = −5 V;
IC = −100 µA;
RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
VCC = −3 V;
IC = −10 mA;
IBon = −1 mA;
IBoff = 1 mA
Min Typ Max Unit
-
-
−50 nA
-
-
−50 nA
60 180 -
80 180 -
100 180 300
60 130 -
30 50 -
-
−100 −250 mV
-
−165 −400 mV
-
−750 −850 mV
-
−850 −950 mV
250 -
-
MHz
-
-
4.5 pF
-
-
10 pF
-
-
4
dB
-
-
35 ns
-
-
35 ns
-
-
70 ns
-
-
225 ns
-
-
75 ns
-
-
300 ns
PMBT3906YS_2
Product data sheet
Rev. 02 — 13 May 2009
© NXP B.V. 2009. All rights reserved.
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