PMBT3906YS データシートの表示（PDF） - NXP Semiconductors.
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PMBT3906YS Datasheet PDF : 12 Pages
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NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
400
hFE
(1)
300
200
(2)
(3)
100
006aab120
−0.3
IC
(A)
−0.2
IB (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.1
006aab121
−2.5
−2.0
−1.5
−1.0
−0.5
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1.2
VBE
(V)
−1.0
−0.8
006aab123
(1)
(2)
−0.6
(3)
−0.4
0
0
−2
−4
−6
−8
−10
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
−1.2
VBEsat
(V)
−1.0
006aab124
(1)
−0.8
(2)
−0.6
(3)
−0.4
−0.2
−10−1
−1
−10
−102
−103
IC (mA)
−0.2
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −1 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PMBT3906YS_2
Product data sheet
Rev. 02 — 13 May 2009
© NXP B.V. 2009. All rights reserved.
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