PMP5501G データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
PMP5501G Datasheet PDF : 14 Pages
| |||
Philips Semiconductors
PMP4501G; PMP4501Y
NPN/NPN matched double transistors
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Per transistor
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
collector-base cut-off VCB = 30 V;
current
IE = 0 A
-
-
15
nA
VCB = 30 V;
IE = 0 A;
Tj = 150 °C
-
-
5
µA
emitter-base cut-off
current
VEB = 5 V;
IC = 0 A
-
-
100
nA
DC current gain
VCE = 5 V;
IC = 10 µA
-
250
-
VCE = 5 V;
IC = 2 mA
200
290
450
collector-emitter
saturation voltage
IC = 10 mA;
IB = 0.5 mA
-
50
200
mV
IC = 100 mA;
-
200
400
mV
IB = 5 mA
base-emitter saturation IC = 10 mA;
[1] -
760
-
mV
voltage
IB = 0.5 mA
IC = 100 mA;
[1] -
910
-
mV
IB = 5 mA
base-emitter voltage
VCE = 5 V;
IC = 2 mA
[2] 610
660
710
mV
VCE = 5 V;
[2] -
-
770
mV
IC = 10 mA
collector capacitance
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
-
-
1.5
pF
Ce
emitter capacitance
VEB = 0.5 V;
-
11
-
pF
IC = ic = 0 A;
f = 1 MHz
fT
transition frequency VCE = 5 V;
100
250
-
MHz
IC = 10 mA;
f = 100 MHz
NF
noise figure
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
-
2.8
-
dB
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
-
3.3
-
dB
PMP4501G_Y_2
Product data sheet
Rev. 02 — 14 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
4 of 14
Share Link: 