PMPB40SNA データシートの表示（PDF） - NXP Semiconductors.

部品番号

コンポーネント説明

メーカー

PMPB40SNA

60 V N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMPB40SNA

60 V N-channel Trench MOSFET

102

ID

(A)

10

Limit RDSon = VDS/ID

aaa-005311

1

DC; Tsp = 25 °C

10-1

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

tp = 100 µs

tp = 1 ms

tp = 10 ms

tp = 100 ms

10-2

10-2

10-1

1

IDM = single pulse

10

102

103

VDS (V)

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Symbol

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance

from junction to

ambient

Conditions

in free air

Rth(j-sp)

thermal resistance

from junction to solder

point

Min Typ Max Unit

[1]

-

235 270 K/W

[2]

-

67

74

K/W

[3]

-

33

36

K/W

-

5

10

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s

PMPB40SNA

Product data sheet

All information provided in this document is subject to legal disclaimers.

29 October 2013

© NXP N.V. 2013. All rights reserved

4 / 15

Share Link: