PMPB40SNA データシートの表示（PDF） - NXP Semiconductors.

部品番号

コンポーネント説明

メーカー

PMPB40SNA

60 V N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

PMPB40SNA

60 V N-channel Trench MOSFET

103

Zth(j-a)

(K/W)

102

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

10

0.02

0.01

0

017aaa542

1

10-3

10-2

10-1

1

FR4 PCB, standard footprint

10

102

103

tp (s)

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

103

017aaa543

Zth(j-a)

(K/W)

102 duty cycle = 1

0.75

0.33

0.2

10

0.5

0.25

0.1

0.05

0.02

0

0.01

1

10-3

10-2

10-1

1

FR4 PCB, mounting pad for drain 6 cm2

10

102

103

tp (s)

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

VGSth

gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C

voltage

IDSS

drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C

VDS = 60 V; VGS = 0 V; Tj = 150 °C

PMPB40SNA

All information provided in this document is subject to legal disclaimers.

Product data sheet

29 October 2013

Min Typ Max Unit

60

-

-

V

1

1.7 3

V

-

-

1

µA

-

-

20

µA

© NXP N.V. 2013. All rights reserved

5 / 15

Share Link: