PMPB40SNA データシートの表示（PDF） - NXP Semiconductors.
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PMPB40SNA Datasheet PDF : 15 Pages
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NXP Semiconductors
PMPB40SNA
60 V N-channel Trench MOSFET
100
RDSon
(mΩ)
80
aaa-005314
2.7 V 2.9 V 3.1 V
3.3 V
2.8 V
3V
3.2 V
60
4.5 V
40
VGS = 10 V
20
120
RDSon
(mΩ)
80
40
aaa-005315
Tj = 150 °C
Tj = 25 °C
0
0
5
10
15
20
25
ID (A)
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
25
ID
(A)
20
aaa-005316
0
0
4
ID = 5 A
8
12
16
20
VGS (V)
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2.0
aaa-005317
a
1.5
15
1.0
10
0.5
5
Tj = 150 °C
Tj = 25 °C
0
0
1
2
VDS > ID × RDSon
3
4
VGS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60
0
60
120
180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMPB40SNA
Product data sheet
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29 October 2013
© NXP N.V. 2013. All rights reserved
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