PMSTA05 データシートの表示（PDF） - Philips Electronics
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PMSTA05 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
PMSTA05; PMSTA06
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
fT
PARAMETER
collector cut-off current
PMSTA05
PMSTA06
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 60 V
−
IE = 0; VCB = 80 V
−
IC = 0; VEB = 3 V
−
IC = 10 mA; VCE = 2 V
50
IC = 100 mA; VCE = 1 V; note 1
50
IC = 100 mA; IB = 10 mA; note 1 −
IC = 100 mA; IB = 10 mA; note 1 −
IC = 100 mA; VCE = 1 V
−
IC = 10 mA; VCE = 2 V; f = 100 MHz 100
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX. UNIT
100
nA
100
nA
500
nA
−
−
250
mV
900
mV
1.2
V
−
MHz
1999 Apr 29
3
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