E28F008BV-B70 データシートの表示（PDF） - Intel
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E28F008BV-B70 Datasheet PDF : 58 Pages
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8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E
4.4 DC Characteristics—Commercial
Sym
Parameter
IIL
Input Load Current
ILO Output Leakage
Current
ICCS VCC Standby Current
ICCD VCC Deep
Power-Down Current
ICCR VCC Read Current for
Word or Byte
ICCW VCC Program Current
for Word or Byte
ICCE VCC Erase Current
ICCES VCC Erase Suspend
Current
Prod
VCC
Notes
1
1
1,3
1
1,5,6
1,4
1,4
1,2
BV-70
BV-120
3.3 ± 0.3 V 5 V ± 10% Units
Test Conditions
Typ Max Typ Max
± 1.0
± 1.0
µA VCC = VCC Max
VIN = VCC or GND
± 10
± 10
µA VCC = VCC Max
VIN = VCC or GND
0.4 1.5 0.8 2.0 mA VCC = VCC Max
CE# = RP# = BYTE# =
WP# = VIH
60 110 50 130 µA VCC = VCC Max
CE# = RP# = VCC ± 0.2V
0.2
8
0.2
8
µA VCC = VCC Max
VIN = VCC or GND
RP# = GND ± 0.2 V
15 30 50 60 mA CMOS INPUTS
VCC = VCC Max
CE# = GND, OE# = VCC
f = 10 MHz (5 V),
5 MHz (3.3 V)
IOUT = 0 mA
Inputs = GND ± 0.2 V or
VCC ± 0.2 V
15 30 55 65 mA TTL INPUTS
VCC = VCC Max
CE# = VIL, OE# = VIH
f = 10 MHz (5 V)
5 MHz (3.3 V)
IOUT = 0 mA
Inputs = VIL or VIH
13
30
30
50
mA VPP = VPPH1 (at 5 V)
Program in Progress
10
25
30
45
mA VPP = VPPH2 (at 12 V)
Program in Progress
13
30
18
35
mA VPP = VPPH1 (at 5 V)
Block Erase in Progress
10
25
18
30
mA VPP = VPPH2 (at 12 V)
Block Erase in Progress
3
8.0
5
10 mA CE# = VIH
Block Erase Suspend
30
SEE NEW DESIGN RECOMMENDATIONS
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