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28F002BV データシートの表示(PDF) - Intel
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28F002BV
2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Intel
28F002BV Datasheet PDF : 55 Pages
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
4.4 DC Characteristics
—Commercial
Prod
Sym
Parameter
I
IL
Input Load Current
V
CC
Note
1
I
LO
Output Leakage Current 1
I
CCS
V
CC
Standby Current
1,3
I
CCD
V
CC
Deep Power-Down
1
Current
I
CCR
V
CC
Read Current for
Word or Byte
1,5,6
I
CCW
V
CC
Program Current for
Word or Byte
1,4
I
CCE
V
CC
Erase Current
1,4
BV-60
BV-80
BV-120
3.3 ± 0.3 V 5 V ± 10%
Typ Max Typ Max
± 1.0
± 1.0
± 10
± 10
0.4 1.5 0.8 2.0
60 110 50 130
0.2 8 0.2 8
15 30 50 60
15 30 55 65
13 30 30 50
10 25 30 45
13 30 18 35
10 25 18 30
Unit
Test Conditions
µA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
µA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
mA
V
CC
= V
CC
Max
CE# = RP# = BYTE# =
WP# = V
IH
µA
V
CC
= V
CC
Max
CE# = RP# = V
CC
±
0.2 V
µA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
RP# = GND ± 0.2 V
mA
CMOS INPUTS
V
CC
= V
CC
Max
CE# = GND, OE# = V
CC
f = 10 MHz (5 V),
5 MHz (3.3 V)
I
OUT
= 0 mA, Inputs =
GND ± 0.2 V or V
CC
± 0.2 V
mA
TTL INPUTS
V
CC
= V
CC
Max
CE# = V
IL
, OE# = V
IH
f = 10 MHz (5 V),
5 MHz (3.3 V)
I
OUT
= 0 mA, Inputs =
V
IL
or V
IH
mA
V
PP
= V
PPH
1 (at 5 V)
Program in Progress
mA
V
PP
= V
PPH
2 (at 12 V)
Program in Progress
mA
V
PP
= V
PPH
1 (at 5 V)
Block Erase in Progress
mA
V
PP
= V
PPH
2 (at 12 V)
Block Erase in Progress
30
SEE NEW DESIGN RECOMMENDATIONS
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