PS2733-4 データシートの表示（PDF） - NEC => Renesas Technology

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PS2733-4

HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP PHOTOCOUPLER

NEC => Renesas Technology 

PS2732-1,-2,-4, PS2733-1,-2,-4

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS

RATINGS

PS2732-1 PS2732-2, -4

PS2733-1 PS2733-2, -4

Diode

VR

Reverse Voltage

V

6

6

IF

Forward Current

mA

50

50

PD

Power Dissipation

mW/Ch

80

80

IF (PEAK) Peak Forward Current

A

1

1

(PW = 100 µs, Duty Cycle 1%)

Transistor

VCEO

Collector to Emitter Voltage

(IC = ImA, IB = 0)

V

300/350

300/350

VEBO

Emitter to Base Breakdown Volt V

6

6

(IE = 100µA, IB = 0)

IC

Collector Current

mA/Ch 150

150

PC

Power Dissipation

mW/Ch 150

120

Coupled

BV

TOP

TSTG

Isolation Voltage2

Operating Temperature

Storage Temperature

Vr.m.s.

°C

°C

2500

-55 to +100

-55 to +150

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

100

Notes:

1. Operation in excess of any one of these parameters

may result in permanent damage.

2. AC voltage for 1 minute at TA = 25 °C, RH = 60 %

between input and ouput.

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

200

75

150

PS2732-1

PS2733-1

1.5 mW/˚C

50

100

PS2732-2,-4

PS2733-2,-4

1.2 mW/˚C

25

50

0

25

50

75

100

Ambient Temperature, TA (°C)

FORWARD CURRENT vs.

FORWARD VOLTAGE

100

TA = 100 ˚C

75 ˚C

50 ˚C

10

25 ˚C

0 ˚C

-25 ˚C

-55 ˚C

1

0.1

0.01

0.6

0.8

1

1.2

1.4

1.6

Forward Voltage, VF (V)

0

25

50

75

100

Ambient Temperature, TA (°C)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

160

140

5 mA 4.5 mA

120

4 mA 3.5 mA

3 mA

2.5 mA

100

2 mA

80

1.5 mA

60

1 mA

40

IF = 0.5 mA

20

0

1

2

3

4

5

Collector to Emitter Voltage, VCE (V)

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