PZTA56 データシートの表示（PDF） - Philips Electronics
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PZTA56 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
PZTA56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−80
−80
−5
−500
−1
−200
1.2
+150
150
+150
UNIT
V
V
V
mA
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
103
K/W
22
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
IE = 0; VCB = −80 V
−
emitter cut-off current
IC = 0; VEB = −5 V
−
DC current gain
IC = −10 mA; VCE = −1 V
100
IC = −100 mA; VCE = −1 V
100
collector-emitter saturation voltage IC = −100 mA; IB = −10 mA
−
base-emitter voltage
IC = −100 mA; VCE = −1 V
−
transition frequency
IC = −100 mA; VCE = −1 V; f = 100 MHz 50
MAX.
−50
−50
−
−
−250
−1.2
−
UNIT
nA
nA
mV
V
MHz
1997 Apr 01
3
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