2N4031 データシートの表示（PDF） - Philips Electronics

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2N4031

PNP high-voltage transistors

Philips Electronics 

Philips Semiconductors

PNP high-voltage transistors

Product specification

2N5415; 2N5416

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

2N5415

2N5416

collector-emitter voltage

2N5415

2N5416

emitter-base voltage

2N5415

2N5416

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 50 °C

Tcase ≤ 25 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

Rth j-c

thermal resistance from junction to ambient

thermal resistance from junction to case

CONDITIONS

in free air

MIN. MAX. UNIT

−

−200 V

−

−350 V

−

−200 V

−

−300 V

−

−4

V

−

−6

V

−

−200 mA

−

−400 mA

−

−200 mA

−

1

W

−

10

W

−65

+200 °C

−

200

°C

−65

+150 °C

VALUE

150

17.5

UNIT

K/W

K/W

1997 May 21

3

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