2N6490 データシートの表示（PDF） - Boca Semiconductor
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2N6490 Datasheet PDF : 2 Pages
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2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
Collector current
Base current
Total power dissipation up to TC = 25°C
Derate above 25°C
Total power dissipation up to TA = 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
IC
IB
Ptot
Ptot
Tj
Tstg
Rth j–a
Rth j–c
Collector cutoff current
IB = 0; VCE = 20 V
ICEO
IB = 0; VCE = 30 V
ICEO
IB = 0; VCE = 40 V
ICEO
VEB(off) = 1.5 V; VCE = 45 V
ICEX
VEB(off) = 1.5 V; VCE = 65 V
ICEX
VEB(off) = 1.5 V; VCE = 85 V
ICEX
VEB(off) = 1.5 V; VCE = 40 V; TC=150°C ICEX
VEB(off) = 1.5 V; VCE = 60 V; TC=150°C ICEX
VEB(off) = 1.5 V; VCE = 80 V; TC=150°C ICEX
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
Breakdown voltages
IC = 200 mA; IB = 0
VCEO(sus)*
IC = 1 mA; IE = 0
VCBO
IC = 200 mA; VBE = 1.5 V
VCEX(sus)*
IE = 1 mA; IC = 0
VEBO
Saturation voltages
IC = 5 A; IB = 0.5 A
VCEsat*
IC = 15 A; IB = 5 A
VCEsat*
Base-emitter on voltage
IC = 5 A; VCE = 4 V
VBE(on)*
IC = 15 A; VCE = 4 V
VBE(on)*
D.C. current gain
IC = 5 A; VCE = 4 V
hFE*
IC = 15 A; VCE = 4 V
Transition frequency
IC = 1 A; VCE = 4 V; f = 1 MHz
Small signal current gain
IC = 1.0A; VCE = 4V; f = 1.0 KHz
hFE*
fT(1)
hfe
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%
(1) fT = |hfe|• ftest
max.
max.
max.
max.
max.
max.
max.
15
5.0
75
0.6
1.8
0.014
150
–65 to +150
A
A
W
W/°C
W
W/°C
°C
°C
70
°C/W
1.67
°C/W
6486 6487 6488
6489 6490 6491
max. 1.0 – – mA
max. – 1.0 – mA
max. – – 1.0 mA
max. 500 – – µA
max. – 500 – µA
max. – – 500 µA
max. 5.0 – – mA
max. – 5.0 – mA
max. – – 5.0 mA
max.
1.0
mA
min. 40 60 80 V
min. 50 70 90 V
min. 50 70 90 V
min.
5.0
V
max.
1.3
V
max.
3.5
V
max.
1.3
V
max.
3.5
V
min.
20
max.
150
min.
5.0
min.
5.0
MHz
min.
25
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