PSMN004-36B データシートの表示（PDF） - Philips Electronics
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PSMN004-36B Datasheet PDF : 13 Pages
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Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
ID = 75 A; VDD = 15 V; VGS = 5 V; Figure 13
VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11
VDD = 15 V; RD = 1.2 Ω; VGS = 5 V; RG = 6 Ω;
resistive load
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
VSD
source-drain (diode forward) voltage IS = 75 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr
recovered charge
Min Typ Max Unit
36 − − V
32 − − V
1 1.5 2 V
0.5 − − V
− − 2.3 V
− 0.05 10 µA
− − 500 µA
− 1 100 nA
− 4 5 mΩ
− − 9.25 mΩ
− − 5.4 mΩ
− 3.5 4 mΩ
− 97 − nC
− 20 − nC
− 39 − nC
− 6000 − pF
− 1700 − pF
− 1400 − pF
− 45 − ns
− 220 − ns
− 435 − ns
− 320 − ns
− 0.85 1.2 V
− 1.1 − V
− 400 − ns
− 1 − µC
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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