PSMN004-60P データシートの表示（PDF） - Philips Electronics
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PSMN004-60P Datasheet PDF : 13 Pages
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Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
tp ≤ 50 µs; pulsed;
duty cycle 25%; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC)
ISM
peak source (diode forward) current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
EDS(AL)S non-repetitive avalanche energy
IDS(AL)S non-repetitive avalanche current
unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C
unclamped inductive load;
VDD = 15 V; RGS = 50 Ω; VGS = 10 V;
starting Tj = 25 °C
Typ
Max Unit
-
60
V
-
75
A
-
230
W
-
175
°C
3.1
3.6
mΩ
Min
Max Unit
-
60
V
-
60
V
-
±20
V
-
±30
V
-
75
A
-
75
A
-
400
A
-
230
W
−55
+175 °C
−55
+175 °C
-
75
A
-
400
A
-
500
mJ
-
75
A
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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