PSMN004-60P データシートの表示（PDF） - Philips Electronics
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PSMN004-60P Datasheet PDF : 13 Pages
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Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
5
VGS(th)
(V)
4
3
max
typ
03aa32
10-1
ID
(A)
10-2
10-3
03aa35
min typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 Tj (oC) 180
10-6
0
2
4
6
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
105
C
(pF)
104
03ah87
Ciss
103
Coss
Crss
102
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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