1C230L データシートの表示（PDF） - NXP Semiconductors.

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1C230L

N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors. 

PSMN1R2-30YLC

N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 1 — 3 May 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

„ High reliability Power SO8 package,

qualified to 175°C

„ Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

„ Ultra low QG, QGD, and QOSS for

high system efficiencies at low and

high loads

„ Ultra low Rdson and low parasitic

inductance

1.3 Applications

„ DC-to-DC converters

„ Lithium-ion battery protection

„ Load switching

„ Power OR-ing

„ Server power supplies

„ Sync rectifier

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDS

drain-source voltage 25 °C ≤ Tj ≤ 175 °C

ID

drain current

Tmb = 25 °C; VGS = 10 V;

see Figure 1

Ptot

total power dissipation Tmb = 25 °C; see Figure 2

Tj

junction temperature

Static characteristics

RDSon

drain-source on-state VGS = 4.5 V; ID = 25 A;

resistance

Tj = 25 °C;

see Figure 12

VGS = 10 V; ID = 25 A;

Tj = 25 °C;

see Figure 12

Min Typ Max Unit

-

-

30 V

[1] -

-

100 A

-

-

-55 -

215 W

175 °C

-

1.35 1.65 mΩ

-

1.05 1.25 mΩ

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