PTVS10VS1UR データシートの表示（PDF） - NXP Semiconductors.
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PTVS10VS1UR Datasheet PDF : 10 Pages
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NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
PPPM
IPPM
rated peak pulse power
rated peak pulse current
[1][2] -
[1] -
IFSM
Non-repetitive peak
single half-sine
-
forward current
wave; tp = 8.3 ms
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] For PTVS3V3S1UR: PPPM = 350 W
6. Thermal characteristics
Max
Unit
400
W
see
Table 7
and 8
50
A
150
°C
+150
°C
+150
°C
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1] -
-
220 K/W
[2] -
-
130 K/W
[3] -
-
70 K/W
[4] -
-
18 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Soldering point of cathode tab.
7. Characteristics
Table 7. Characteristics per type; PTVS3V3S1UR to PTVS7V0S1UR
Tj = 25 °C unless otherwise specified.
Type number
Reverse standoff Breakdown voltage
voltage
VBR (V)
Reverse leakage
current
VRWM (V)
IRM (µA)
IR = 10 mA
at VRWM (V)
Max
Min
Typ
Max Typ
Max
PTVS3V3S1UR
3.3
5.20 5.60 6.00 5
600
PTVS5V0S1UR
5.0
6.40 6.70 7.00 5
400
PTVS6V0S1UR
6.0
6.67 7.02 7.37 5
400
PTVS6V5S1UR
6.5
7.22 7.60 7.98 5
250
PTVS7V0S1UR
7.0
7.78 8.20 8.60 3
100
PTVSXS1UR_SER_2
Product data sheet
Rev. 02 — 10 September 2009
Clamping voltage
VCL (V)
Max
8.0
IPPM (A)
43.8
9.2
43.5
10.3
38.8
11.2
35.7
12.0
33.3
© NXP B.V. 2009. All rights reserved.
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