PEMD13 データシートの表示（PDF） - NXP Semiconductors.
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PEMD13 Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product data sheet
PEMD13; PUMD13
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
TR1
NPN
TR2
PNP
R1
bias resistor
R2
bias resistor
TYP.
−
−
−
−
4.7
47
MAX. UNIT
50 V
100 mA
−
−
−
−
−
kΩ
−
kΩ
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE
NUMBER
PEMD13
PUMD13
PACKAGE
PHILIPS
SOT666
SOT363
EIAJ
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE
Z1
3*1(1)
PNP/PNP
COMPLEMENT
PEMB13
PUMB13
NPN/NPN
COMPLEMENT
PEMH13
PUMH13
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMD13
PUMD13
SIMPLIFIED OUTLINE AND SYMBOL
6
5
4
1
2
3
Top view
6
5
4
R1 R2
TR2
TR1
R2 R1
1
2
3
MAM468
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2003 Oct 08
2
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